The dry-etch is a critical process step for microelectronic devices manufacturing. Indeed, the scaling down of the device feature-size imposes an increasing complexity of this technological process and, consequently, a cost increase of the Research and Development (R&D). The use of computational tool aimed to simulating the etching process should reduce substantially the R&D cost and time. Moreover, these tools are fundamental to improve the understanding of the etching microscopic mechanism. In general, a noteworthy reduction of the device development cost in whole production cycle can be achieved including these tools in the virtual fab, i.e. a set of numerical tools able to simulate the effects of the full process steps flow. In this paper we discuss the application of a profile evolution simulator as a tool of the virtual fab.

The virtual fab in microelectronics: the dry etch case

A La Magna
2002

Abstract

The dry-etch is a critical process step for microelectronic devices manufacturing. Indeed, the scaling down of the device feature-size imposes an increasing complexity of this technological process and, consequently, a cost increase of the Research and Development (R&D). The use of computational tool aimed to simulating the etching process should reduce substantially the R&D cost and time. Moreover, these tools are fundamental to improve the understanding of the etching microscopic mechanism. In general, a noteworthy reduction of the device development cost in whole production cycle can be achieved including these tools in the virtual fab, i.e. a set of numerical tools able to simulate the effects of the full process steps flow. In this paper we discuss the application of a profile evolution simulator as a tool of the virtual fab.
2002
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
6th World Multi-Conference on Systemics, Cybernetics and Informatics (SCI 2002)/8th International Conference on Information Systems Analysis and Synthesis (ISAS 2002)
Sì, ma tipo non specificato
14-18/7/ 2002
ORLANDO
1
none
G. Garozzo; A. La Magna
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/200499
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