Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001)GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures
Exciton states in InxGa1-xAs/GaAs double quantum wells: Normalized reflection spectral
L Ferrari;S Selci;
1995
Abstract
Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001)GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structuresFile in questo prodotto:
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