We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field. The extent to which such screening is effective depends on the non-radiative recombination probability which depletes the ground level of the quantum well, causing the recovery of the unscreened built infield. The account of the mesoscopic capacitor effect provides a quantitative description of the optical spectra of a set of high quality quantum wells, with well characterized structural parameters.

Mesoscopic capacitor effect in GaN/AlGaN quantum wells

Napolitani E;
2000

Abstract

We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field. The extent to which such screening is effective depends on the non-radiative recombination probability which depletes the ground level of the quantum well, causing the recovery of the unscreened built infield. The account of the mesoscopic capacitor effect provides a quantitative description of the optical spectra of a set of high quality quantum wells, with well characterized structural parameters.
2000
4-900526-13-4
GaN/AlGaN MQWs
piezoelectric field
PIEZOELECTRIC FIELDS
POLARIZATION-FIELDS
WIDTH DEPENDENCE
NITRIDES
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/201057
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