New active photonic components are proposed which exploit two amorphous silicon and related alloys optoelectronic peculiarities. In particular the thermo-optic effect and the photoinduced absorption at the infrared wavelengths are employed to design respectively a spatial switch and a light amplitude modulator. Both devices are integrated within a silicon on SiO2 waveguide.

Amorphous silicon based active photonic devices

Summonte C;
2005

Abstract

New active photonic components are proposed which exploit two amorphous silicon and related alloys optoelectronic peculiarities. In particular the thermo-optic effect and the photoinduced absorption at the infrared wavelengths are employed to design respectively a spatial switch and a light amplitude modulator. Both devices are integrated within a silicon on SiO2 waveguide.
2005
Group IV Photonics
Group IV Photonics, 2005. 2nd IEEE International Conference on
71
73
3
0-7803-9070-9
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1516407
IEEE
New York
STATI UNITI D'AMERICA
21-23 Sept. 2005
1
none
Della Corte, F.G.Nigro, M.A. ; Summonte, C. ; Cantore, F. ; Gagliardi, M. ; Rao, S.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/20130
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