Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.
Design, fabrication, and characterization of an ?-Si:H/?-SiCN multistack waveguide for electro optical modulation
Summonte C;
2008
Abstract
Electro-optical absorption in alpha-Si:H/alpha-SiCxNy multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda=1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.File in questo prodotto:
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