The aim of this work is to present performances of a miniaturised, silicon membrane supported, straight edge resonator. S11 and S21 parameters of this device are presented for different magnetic bias fields, exhibiting frequency tunability between 2 GHz and 7.5 GHz. The use of silicon membranes to support these devices offers important openings toward the integration of magnetostatic wave devices with micromachined structures.
Tunable SER on Microprocessed Silicon Membrane and on Silicon Bulk
R Marcelli
2001
Abstract
The aim of this work is to present performances of a miniaturised, silicon membrane supported, straight edge resonator. S11 and S21 parameters of this device are presented for different magnetic bias fields, exhibiting frequency tunability between 2 GHz and 7.5 GHz. The use of silicon membranes to support these devices offers important openings toward the integration of magnetostatic wave devices with micromachined structures.File in questo prodotto:
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