Arrays of vertical nanowires structured in Au/NiO/Au segments with 50 nm diameter are characterized by conductive atomic force microscopy to investigate unipolar resistive switching in NiO at the nanoscale. The switching cycles are characterized by extremely low power consumption down to 1.3 nW, which constitutes a significant improvement in nanowire-based resistive switching memory devices. The trend of the reset current as a function of the set resistance, typical of unipolar memories, is extended to a much wider current range than what is reported in literature, confirming the role of Joule heating in the reset process for very low reset currents.

Low-power resistive switching in Au/NiO/Au nanowire arrays

S Brivio;G Tallarida;S Spiga
2012

Abstract

Arrays of vertical nanowires structured in Au/NiO/Au segments with 50 nm diameter are characterized by conductive atomic force microscopy to investigate unipolar resistive switching in NiO at the nanoscale. The switching cycles are characterized by extremely low power consumption down to 1.3 nW, which constitutes a significant improvement in nanowire-based resistive switching memory devices. The trend of the reset current as a function of the set resistance, typical of unipolar memories, is extended to a much wider current range than what is reported in literature, confirming the role of Joule heating in the reset process for very low reset currents.
2012
Istituto per la Microelettronica e Microsistemi - IMM
CORE-SHELL NANOWIRES
MEMORY
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/202024
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