GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions, either crystalline or amorphous dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. A blue shift of the near band-edge photoluminescence (quantum confinement effect) is observed for GaN nanocrystals with a size of similar to2-3 nm, formed in the alpha -Al2O3 substrate.
Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectrics
2001
Abstract
GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions, either crystalline or amorphous dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. A blue shift of the near band-edge photoluminescence (quantum confinement effect) is observed for GaN nanocrystals with a size of similar to2-3 nm, formed in the alpha -Al2O3 substrate.File in questo prodotto:
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