Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. We find that the quantum capacitance of the CNT becomes negative as the CNT carrier density is reduced. This corresponds to an unconventionally high charge accumulation on the CNT, which in turn overscreens the external gate field. The relationship between this behavior and the predominance of the attractive exchange energy contribution is pointed out.

Negative quantum capacitance of gated carbon nanotubes

Pecchia A;
2005

Abstract

Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. We find that the quantum capacitance of the CNT becomes negative as the CNT carrier density is reduced. This corresponds to an unconventionally high charge accumulation on the CNT, which in turn overscreens the external gate field. The relationship between this behavior and the predominance of the attractive exchange energy contribution is pointed out.
2005
LOCAL-FIELD CORRECTION
ELECTRON-GAS
2-DIMENSIONAL ELECTRON
COMPRES
TRANSISTORS
EXCHANGE
DEVICES
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/202145
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 31
  • ???jsp.display-item.citation.isi??? 30
social impact