Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AIN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.
Electronic and transport properties of GaN/AlGaN quantum dot-based p-i-n diodes
Pecchia A;
2008
Abstract
Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AIN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.File in questo prodotto:
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