Due to the downscaling of semiconductor device dimensions and the emergence of new devices based on nanostructures, CNTs and molecules, the classical device simulation approach based on semi-classical transport theories needs to be extended towards a quantum mechanical description. We present a simulation environment designed for multiscale and multiphysics simulation of electronic and optoelectronic devices with the final aim of coupling classical with atomistic simulation approaches.

TiberCAD: Towards multiscale simulation of optoelectronic devices

Pecchia A;
2008

Abstract

Due to the downscaling of semiconductor device dimensions and the emergence of new devices based on nanostructures, CNTs and molecules, the classical device simulation approach based on semi-classical transport theories needs to be extended towards a quantum mechanical description. We present a simulation environment designed for multiscale and multiphysics simulation of electronic and optoelectronic devices with the final aim of coupling classical with atomistic simulation approaches.
2008
Inglese
NUSOD `08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES
8th International Conference on Numerical Simulation of Optoelectronic Devices, Univ Nottingham, Nottingham, ENGLAND, SEP 01-04, 2008
43
44
978-1-4244-2307-1
No
1
none
der Maur; M Auf;Povolotskyi M;Sacconi F;Pecchia A;Romano G;Penazzi G;Di Carlo; A
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/202196
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 2
social impact