A high resolution electron energy loss investigation of the electronic properties of Sb/InP{llO) and Sb/GaAs(llO) interfaces. is presented. We compare data relative to a well ordered Sb monolayer with those correspondjng to clean se~~nductor surfaces, focusing the attention on the electronic transitions involving the Sb-induced states. In particular the existence of the Sb induced empty state 57. when the ordered Sb monolayer is formed, has been experimentally proved.
Antimony induced states in Sb/InP( 110) and Sb/GaAs( 110) interfaces studied by high resolution electron energy loss spectroscopy
M Pedio;
1991
Abstract
A high resolution electron energy loss investigation of the electronic properties of Sb/InP{llO) and Sb/GaAs(llO) interfaces. is presented. We compare data relative to a well ordered Sb monolayer with those correspondjng to clean se~~nductor surfaces, focusing the attention on the electronic transitions involving the Sb-induced states. In particular the existence of the Sb induced empty state 57. when the ordered Sb monolayer is formed, has been experimentally proved.File in questo prodotto:
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