An investigation of the electronic states for the clean InP(110) surface and the Sb/InP(110) interface by means of high-resolution electron-energy-loss spectroscopy is presented. The electronic transitions involving surface and Sb-induced states are discussed and compared with previous results. When an ordered Sb monolayer is formed, a clear structure appears within the bulk gap. This is experimental evidence of the presence of an Sb-induced state in the projected bulk fundamental gap, in agreement with previous band-structure calculations.
Antimony-induced electronic states in the Sb/InP(110) interface studied by high-resolution electron-energy-loss spectroscopy
M Pedio;
1991
Abstract
An investigation of the electronic states for the clean InP(110) surface and the Sb/InP(110) interface by means of high-resolution electron-energy-loss spectroscopy is presented. The electronic transitions involving surface and Sb-induced states are discussed and compared with previous results. When an ordered Sb monolayer is formed, a clear structure appears within the bulk gap. This is experimental evidence of the presence of an Sb-induced state in the projected bulk fundamental gap, in agreement with previous band-structure calculations.File in questo prodotto:
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