ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10(7) and forward current density as high as 10(4) A/cm(2) are reported. Results of the integration with NiO based switching memory elements are also shown.
Low temperature rectifying junctions for crossbar non-volatile memory devices
G Tallarida;S Spiga;
2009
Abstract
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10(7) and forward current density as high as 10(4) A/cm(2) are reported. Results of the integration with NiO based switching memory elements are also shown.File in questo prodotto:
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