The electron-hole plasma under 3-D carrier confinement is studied in GaAs by means of Raman scattering and photoluminescence measurements. We have demonstrated for the first time that under these well defined experimental conditions an excellent agreement is achieved for the plasma density values determined independently from single particle excitations, collective mixed plasmon-LO phonon modes and photoluminescence.
Consistent density determination by Raman and photoluminescence experiments in completely confined eh plasma in GaAs
LG Quagliano
1983
Abstract
The electron-hole plasma under 3-D carrier confinement is studied in GaAs by means of Raman scattering and photoluminescence measurements. We have demonstrated for the first time that under these well defined experimental conditions an excellent agreement is achieved for the plasma density values determined independently from single particle excitations, collective mixed plasmon-LO phonon modes and photoluminescence.File in questo prodotto:
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