The coupled plasmon-LO-phonon and single-particle excitations of a photocreated electron-hole plasma in high purity GaAs are studied by means of Raman scattering measurements. The experimental results are described by the random-phase approximation with respect to the multicomponent character of optical plasma. From single-particle spectra the plasma distribution function and drift velocities up to 107 cm/s have been determined. Using the coupled modes as probe for the plasma density the temperature dependence of the recombination in the EHP is studied.

Inelastic light scattering in highly excited GaAs

LG Quagliano
1985

Abstract

The coupled plasmon-LO-phonon and single-particle excitations of a photocreated electron-hole plasma in high purity GaAs are studied by means of Raman scattering measurements. The experimental results are described by the random-phase approximation with respect to the multicomponent character of optical plasma. From single-particle spectra the plasma distribution function and drift velocities up to 107 cm/s have been determined. Using the coupled modes as probe for the plasma density the temperature dependence of the recombination in the EHP is studied.
1985
Raman
plasmon-LO-phonon
electron-hole plasma
GaAs
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/202852
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