Evidence of image states on semiconductor surfaces has been very scanty so far. We find that resonant scattering through image resonances totally dominates the electron energy loss spectra of the ? phase of Pb/Ge(111) if the energy and the parallel momentum of the scattered electron are in the gap of the bulk bands projected onto the (1×1) surface Brillouin zone. The high energy and momentum resolution obtainable allows a detailed study of the interaction of these excited states with the substrate.

Dispersion and intrinsic width of image resonances measured by resonant inelastic electron scattering: the ? phase of Pb/Ge(111)

M Zangrando;S Modesti
1999

Abstract

Evidence of image states on semiconductor surfaces has been very scanty so far. We find that resonant scattering through image resonances totally dominates the electron energy loss spectra of the ? phase of Pb/Ge(111) if the energy and the parallel momentum of the scattered electron are in the gap of the bulk bands projected onto the (1×1) surface Brillouin zone. The high energy and momentum resolution obtainable allows a detailed study of the interaction of these excited states with the substrate.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/203547
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