A detailed TEM investigation was performed on capped single and vertical ly stacked In0.5Ga0.5As/GaAs quantum dots (QDs). The different diffraction contrast observed from the plan-view TEM images in the samples was correlated to the strain fields in the 3D islands.
Effect of vertical size uniformity on diffraction contrast images of stacked InGaAs/GaAs quantum dots
A Passaseo;M Catalano
2001
Abstract
A detailed TEM investigation was performed on capped single and vertical ly stacked In0.5Ga0.5As/GaAs quantum dots (QDs). The different diffraction contrast observed from the plan-view TEM images in the samples was correlated to the strain fields in the 3D islands.File in questo prodotto:
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