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A detailed TEM investigation was performed on capped single and vertical ly stacked In0.5Ga0.5As/GaAs quantum dots (QDs). The different diffraction contrast observed from the plan-view TEM images in the samples was correlated to the strain fields in the 3D islands.

Effect of vertical size uniformity on diffraction contrast images of stacked InGaAs/GaAs quantum dots

A Passaseo;M Catalano
2001

Abstract

A detailed TEM investigation was performed on capped single and vertical ly stacked In0.5Ga0.5As/GaAs quantum dots (QDs). The different diffraction contrast observed from the plan-view TEM images in the samples was correlated to the strain fields in the 3D islands.
2001
Inglese
Proceedings of the 25th international conference on the physics of semiconductors
25th International Conference on the Physics of Semiconductors (ICPS25)
87
369
370
3-540-41778-8
Sì, ma tipo non specificato
Sep 17-22, 2000
Osaka
WOS:000171592800169
2
none
M. De Giorgi; A. Passaseo; R. Cingolani; A.Taurino; M. Catalano
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/203830
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