Dielectric-like degradation of thin-film conductors is simulated up to final breakdown within a biased percolation model. As relevant indicators we take the damage pattern, current distribution, resistance variation, failure lifetime and relative resistance fluctuations. The results show that biased percolation predicts well several known features taking place close to the abrupt failure of thin films in close agreement with available experimental results.
A percolative simulation of dielectric-like breakdown
A Cola;M De Vittorio;M Mazzer
1998
Abstract
Dielectric-like degradation of thin-film conductors is simulated up to final breakdown within a biased percolation model. As relevant indicators we take the damage pattern, current distribution, resistance variation, failure lifetime and relative resistance fluctuations. The results show that biased percolation predicts well several known features taking place close to the abrupt failure of thin films in close agreement with available experimental results.File in questo prodotto:
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