We discuss the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a photovoltaic gating effect
On optical gain mechanisms in a 2DEG photodetector
Cola A;Quaranta F;
2001
Abstract
We discuss the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a photovoltaic gating effectFile in questo prodotto:
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