We have performed Soft X-Ray Photoelectron Diffraction measurents, at the Ga3d, As3d and In4d core levels, to study the effects of strain on InGaAs grown on (001) GaAs. Polar and azimuthal scans have been recorded and compared with Single Scattering Cluster Calculations. A good agreement is obtained between theory and experiment indicating that the lattice expands in the growth direction as predicted by the elastic theory.
Photoelectron diffraction investigation of strained InGaAs grown on (001) GaAs
1997
Abstract
We have performed Soft X-Ray Photoelectron Diffraction measurents, at the Ga3d, As3d and In4d core levels, to study the effects of strain on InGaAs grown on (001) GaAs. Polar and azimuthal scans have been recorded and compared with Single Scattering Cluster Calculations. A good agreement is obtained between theory and experiment indicating that the lattice expands in the growth direction as predicted by the elastic theory.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
