We report on a study on the effect of Nd/Ba disorder on the ab-plane penetration depth of epitaxial Nd1+xBa2-xCu3O7-delta thin films. While in stoichiometric samples lambda(T) at low temperature is linear, Nd-rich films exhibit a quadratic law. For low Nd excess (x < 0.04), a satisfying fit is obtained using the "dirty" d-wave model assuming that Nd ions at Ba sites act as strong scattering centers. At high x (x > 0.15) the data are explained if Nd/Ba disorder becomes less effective as a source of scattering. The effect of localization has been discussed to account for the experimental results.

Role of Nd/Ba disorder on the penetration depth of Nd1+xBa2-xCu3O7-delta thin films

SALLUZZO M;
2000

Abstract

We report on a study on the effect of Nd/Ba disorder on the ab-plane penetration depth of epitaxial Nd1+xBa2-xCu3O7-delta thin films. While in stoichiometric samples lambda(T) at low temperature is linear, Nd-rich films exhibit a quadratic law. For low Nd excess (x < 0.04), a satisfying fit is obtained using the "dirty" d-wave model assuming that Nd ions at Ba sites act as strong scattering centers. At high x (x > 0.15) the data are explained if Nd/Ba disorder becomes less effective as a source of scattering. The effect of localization has been discussed to account for the experimental results.
2000
INFM
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
MICROWAVE SURFACE IMPEDANCE; TEMPERATURE-DEPENDENCE; SINGLE-CRYSTALS; SUPERCONDUCTORS; YBA2CU3O7-DELTA; YBA2CU3O6.95
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/205359
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