STATISTICAL APPROACH TO THE STRAIN-DRIVEN FORMATION OF InAs QUANTUM DOTS ON GaAs(001)

It is shown that the change of the growth mode from 2D to 3D in the formation of InAs quantum dots on (001) GaAs i.e. Stranski-Krastanov transition is actually a two-dimensional phase transition in the lattice-gas model. Three-parameter isotherms are used to describe the phase transition and the parameters of lateral interaction leading to the condensation of quantum dots are defined.

Pokazano, ?to perehod Stranskogo-Krastanova fakti?eski javljaetsja dvumernym fazovym perehodom v modeli re?eto?nogo gaza. Dlja opisanija fazovogo perehoda byli ispol'zovany trehparametri?eskie izotermy; opredeleny parametry lateral'nogo vzaimodejstvija, privodja?ie k kondensacii kvantovyh to?ek.