A contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination lifetime and surface recombination velocity, at low injection level, in silicon samples is presented. Being contactless and non-destructive with respect to the surface to be analysed, the method is appealing for routine lifetime characterisation.
Separation of bulk lifetime and surface recombination velocity by multiwavelength technique
Sirleto L;
2002
Abstract
A contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination lifetime and surface recombination velocity, at low injection level, in silicon samples is presented. Being contactless and non-destructive with respect to the surface to be analysed, the method is appealing for routine lifetime characterisation.File in questo prodotto:
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