Extended X-ray absorption fine structure spectroscopy has been used to investigate the microscopic structure of InGaAs pseudomorphically grown on a [001]GaAs substrate. The measure is restricted to the quasi-surface region of the epitaxial growth by means of the glancing-angle technique. The results show that the strain is accommodated by bond-stretching and bond-bending and that the lattice expands in the growth direction within the limits previewed by the elastic theory.
Microscopic structure of strained InGaAs/GaAs heterostructures
1996
Abstract
Extended X-ray absorption fine structure spectroscopy has been used to investigate the microscopic structure of InGaAs pseudomorphically grown on a [001]GaAs substrate. The measure is restricted to the quasi-surface region of the epitaxial growth by means of the glancing-angle technique. The results show that the strain is accommodated by bond-stretching and bond-bending and that the lattice expands in the growth direction within the limits previewed by the elastic theory.File in questo prodotto:
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