La caractérisation de couches de TiN sur Si monocristallin, obtenues par implantation ionique, a été effectuée en traitant les mesures ellipsométriques par un programme très souple qui s'adapte bien aux conditions expérimentales. Les résultats obtenus sur les couches implantées et recuites par faisceaux d'énergie (faisceau d'électrons, lumière incohérente) sont examinés en vue d'applications technologiques possibles.
The optical characterization of TiN films produced on Si substrates by ion-implantation was performed by handling the ellipsometric measurements through a flexible program which well conforms to the various experimental situations. The results obtained on as-implanted and transient thermally annealed films are discussed in relation to different possible technological applications.
A new ellipsometric programme applied to the characterization of transparent conducting Titanium Nitride films
R Rosa;
1983
Abstract
The optical characterization of TiN films produced on Si substrates by ion-implantation was performed by handling the ellipsometric measurements through a flexible program which well conforms to the various experimental situations. The results obtained on as-implanted and transient thermally annealed films are discussed in relation to different possible technological applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
