Highly transmissive ballistic junctions are demonstrated between two superconducting Nb electrodes and the two-dimensional electron gas formed at an InAs/AISb heterojunction. A reproducible fabrication protocol is presented yielding good critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity exceeding 86%.

Josephson current in Nb/InAs/Nb highly transmissive ballistic junctions

Giazotto F;Fazio R;Beltram F;
2004

Abstract

Highly transmissive ballistic junctions are demonstrated between two superconducting Nb electrodes and the two-dimensional electron gas formed at an InAs/AISb heterojunction. A reproducible fabrication protocol is presented yielding good critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity exceeding 86%.
2004
Istituto Nanoscienze - NANO
Josephson junction
ballistic transport
Nb/InAs/Nb junctions
SUPERCONDUCTING WEAK LINKS
FIELD-EFFECT TRANSISTORS
ENERGY-GAP STRUCTURE
ANDREEV SCATTERING
ELECTRON-GAS
TRANSPORT
HETEROSTRUCTURE
CONSTRICTIONS
TRANSITION
CONTACTS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/206151
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