The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green's-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.
Evidence of two-electron tunneling interference in Nb/InAs junctions
Giazotto F;Lazzarino M;Pingue P;Beltram F;Fazio;
2000
Abstract
The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green's-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
