Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures. (C) 1998 American Institute of Physics. [S0003-6951(98)02852-6].
Andreev reflection in Si-engineered Al/InGaAs hybrid junctions
Giazotto F;Beltram F;Sorba L;Lazzarino M;Franciosi;
1998
Abstract
Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures. (C) 1998 American Institute of Physics. [S0003-6951(98)02852-6].File in questo prodotto:
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