High-quality c-axis oriented MgB2 superconducting thin films were grown on MgO and Al2O3 single crystal substrates by a d.c. planar magnetron sputtering technique. The films were obtained starting by Mg rich Mg-B precursor films, subsequently annealed in situ at 800degreesC for 10 min in a In sealed Nb box in the presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. Resistive Iransition of the 1 mum thick resulting films showed a maximum critical temperature T, of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best samples. The films were characterized by a variety of structural and electronic techniques including profilometry, XRD, EDS, and STM-AFM analyses, critical current, upper critical field and penetration depth measurements. In view of possible device applications, the microwave response has been studied in detail. The measured dependence of the surface impedance from temperature and r.f. field amplitude at 20 GHz via a dielectric resonator technique is reported and discussed.
In situ sputtering growth and characterization of MgB2 films for microwave applications
Chiarella F;Lamura G;Salluzzo M;
2003
Abstract
High-quality c-axis oriented MgB2 superconducting thin films were grown on MgO and Al2O3 single crystal substrates by a d.c. planar magnetron sputtering technique. The films were obtained starting by Mg rich Mg-B precursor films, subsequently annealed in situ at 800degreesC for 10 min in a In sealed Nb box in the presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. Resistive Iransition of the 1 mum thick resulting films showed a maximum critical temperature T, of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best samples. The films were characterized by a variety of structural and electronic techniques including profilometry, XRD, EDS, and STM-AFM analyses, critical current, upper critical field and penetration depth measurements. In view of possible device applications, the microwave response has been studied in detail. The measured dependence of the surface impedance from temperature and r.f. field amplitude at 20 GHz via a dielectric resonator technique is reported and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
