The growth by rf diode sputtering of magnetic garnet thin single and multiple layers and their morphological, compositional and optical absorption characterization are described. Crystalline, defect-free layers and multilayer structures can be obtained by properly imposing the sputtering conditions (substrate temperature and rf power) and the thermal post-annealing cycle to crystallize ex-situ the garnet films.
Growth of magnetic garnet multilayers by RF diode sputtering
Marcelli R;de Gasperis;
1992
Abstract
The growth by rf diode sputtering of magnetic garnet thin single and multiple layers and their morphological, compositional and optical absorption characterization are described. Crystalline, defect-free layers and multilayer structures can be obtained by properly imposing the sputtering conditions (substrate temperature and rf power) and the thermal post-annealing cycle to crystallize ex-situ the garnet films.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
