We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures
1995
Abstract
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
