Extended x-ray-absorption fine-structure measurements have been performed at the As K edge of GaAs/InP and InAs/InP strained single heterostructures grown by molecular-beam epitaxy. The results show a substantial conservation of the bond length in the strained epitaxial layers with respect to the corresponding bulk materials. The measures point out the formation of a thick InAsP (or InGaAsP) layer at the GaAs/InP interface.
EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF INAS/INP AND GAAS/INP STRAINED HETEROSTRUCTURES
1995
Abstract
Extended x-ray-absorption fine-structure measurements have been performed at the As K edge of GaAs/InP and InAs/InP strained single heterostructures grown by molecular-beam epitaxy. The results show a substantial conservation of the bond length in the strained epitaxial layers with respect to the corresponding bulk materials. The measures point out the formation of a thick InAsP (or InGaAsP) layer at the GaAs/InP interface.File in questo prodotto:
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