We report on XAFS at the As K-edge of GaAs/InP and InAs/InP strained single heterostructures. The results show a conservation of the bond-length in the strained layers with respect to the corresponding bulk materials. The measurements point out the formation of several In-As bonds at the GaAs/InP interface.
GLANCING ANGLE XAFS OF INAS/INP AND GAAS/INP - STRAIN AND INTERFACE
1995
Abstract
We report on XAFS at the As K-edge of GaAs/InP and InAs/InP strained single heterostructures. The results show a conservation of the bond-length in the strained layers with respect to the corresponding bulk materials. The measurements point out the formation of several In-As bonds at the GaAs/InP interface.File in questo prodotto:
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