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We report on XAFS at the As K-edge of GaAs/InP and InAs/InP strained single heterostructures. The results show a conservation of the bond-length in the strained layers with respect to the corresponding bulk materials. The measurements point out the formation of several In-As bonds at the GaAs/InP interface.

GLANCING ANGLE XAFS OF INAS/INP AND GAAS/INP - STRAIN AND INTERFACE

1995

Abstract

We report on XAFS at the As K-edge of GaAs/InP and InAs/InP strained single heterostructures. The results show a conservation of the bond-length in the strained layers with respect to the corresponding bulk materials. The measurements point out the formation of several In-As bonds at the GaAs/InP interface.
1995
208
557
Sì, ma tipo non specificato
5
info:eu-repo/semantics/article
262
S TURCHINI S, Turchini; PROIETTI MG PROIETTI MG, ; F MARTELLI F, Martelli; T PROSPERI T, Prosperi; J GARCIA J, Garcia
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/208770
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