Photoluminescence measurements have been performed at low temperature in InxGa1-xAs/GaAs quantum wells with different well widths, L, and indium concentrations, x. The dependence df the experimental linewidth of the heavy-hole-free-exciton recombination lines on L and x has been compared with existing models of interface and alloy disorder. It has been demonstrated that interface disorder has a crucial role at low L and high x. The estimated values of the interface-roughness size agree well with those found by different techniques.
LINEWIDTH ANALYSIS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS QUANTUM-WELLS (X=0.09, 0.18, 1.0)
1995
Abstract
Photoluminescence measurements have been performed at low temperature in InxGa1-xAs/GaAs quantum wells with different well widths, L, and indium concentrations, x. The dependence df the experimental linewidth of the heavy-hole-free-exciton recombination lines on L and x has been compared with existing models of interface and alloy disorder. It has been demonstrated that interface disorder has a crucial role at low L and high x. The estimated values of the interface-roughness size agree well with those found by different techniques.File in questo prodotto:
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