We present a determination of the complex dielectric function of Si(111) 2 × 1, GaAs(110) and GaP(110) surfaces by using polarized Surface Differential Reflectivity technique. The effective number of electrons per atom participating in the optical transitions is calculated for energies up to 4.0 eV for each surface.
Determination of the complex dielectric function of Si(111) 2 × 1, GaAs(110) and GaP(110) surfaces by polarized surface differential reflectivity
Cricenti A;Selci S;
1988
Abstract
We present a determination of the complex dielectric function of Si(111) 2 × 1, GaAs(110) and GaP(110) surfaces by using polarized Surface Differential Reflectivity technique. The effective number of electrons per atom participating in the optical transitions is calculated for energies up to 4.0 eV for each surface.File in questo prodotto:
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