We report on the implementation and characterisation of Auston switches based on semi-insulating CdTe, aimed at optically driving integrated optics modulators. In view of applications, switching of voltages around a few volts in sub-nanosecond or picosecond time scale is required, while minimizing optical energy. Most efficient operation is obtained at lambda = 810 nm, using In: CdTe, where 6 V are switched by use of 2.5 nJ pulses in the nanosecond regime. Intrinsic sub-nanosecond response times are evident and from experimental results activating switching energies down to 50 pJ per pulse can be estimated for the device, when switching at 10 GHz, corresponding to 500 mW pulse peak power.

CdTe-based Auston switch for optically-driven integrated optics devices

Silvia Maria Pietralunga;Andrea Zappettini;Francesco Bissoli;
2002

Abstract

We report on the implementation and characterisation of Auston switches based on semi-insulating CdTe, aimed at optically driving integrated optics modulators. In view of applications, switching of voltages around a few volts in sub-nanosecond or picosecond time scale is required, while minimizing optical energy. Most efficient operation is obtained at lambda = 810 nm, using In: CdTe, where 6 V are switched by use of 2.5 nJ pulses in the nanosecond regime. Intrinsic sub-nanosecond response times are evident and from experimental results activating switching energies down to 50 pJ per pulse can be estimated for the device, when switching at 10 GHz, corresponding to 500 mW pulse peak power.
2002
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/210287
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