The authors studied the electrical stability of the asymmetric fingered polysilicon thin film transistors (AF-TFTs) at different bias-stress conditions by using a new test structure with an additional contact on the n(+)-floating region. This structure allows to measure the two subchannel TFT (sub-TFT) electrical characteristics before and after bias stressing. The AF-TFTs show a very stable saturation regime, even when bias stressing at very high V-ds, where the electrical characteristics of both sub-TFTs are degraded. The authors concluded that stability of the AF-TFTs is related to the specific operation of the device rather than to immunity of this structure to hot carrier effects.
Improved electrical stability in asymmetric fingered polysilicon Thin Film Transistors
M Cuscunà;L Mariucci;G Fortunato;A Pecora;A Valletta
2006
Abstract
The authors studied the electrical stability of the asymmetric fingered polysilicon thin film transistors (AF-TFTs) at different bias-stress conditions by using a new test structure with an additional contact on the n(+)-floating region. This structure allows to measure the two subchannel TFT (sub-TFT) electrical characteristics before and after bias stressing. The AF-TFTs show a very stable saturation regime, even when bias stressing at very high V-ds, where the electrical characteristics of both sub-TFTs are degraded. The authors concluded that stability of the AF-TFTs is related to the specific operation of the device rather than to immunity of this structure to hot carrier effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
