Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Sil -.Ge,/Si quantum well (QW) grown by solid-source MBE at a nominal composition of .Y = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller X NP and Xro excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.
Photoluminescence characterization of SiGe heterostructure grown by MBE
P De Padova;P Perfetti;R Felici;S Priori;C Quaresima;
1997
Abstract
Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Sil -.Ge,/Si quantum well (QW) grown by solid-source MBE at a nominal composition of .Y = 17%. The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RBS and XRD), especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense broad band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller X NP and Xro excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
