At low temperatures the space charge distribution near the metal contact of Schottky barriers on n-type AlGaAs can be changed by the application of forward biases, so that C-V profiles are deformed. Such a phenomenon, which is related to hole injection in the carrier, is mainly ascribed to hole capture at the DX center.
Hole capture by the DX center in AlGaAs Schottky barriers
R MOSCA;E GOMBIA;P FRIGERI;
1994
Abstract
At low temperatures the space charge distribution near the metal contact of Schottky barriers on n-type AlGaAs can be changed by the application of forward biases, so that C-V profiles are deformed. Such a phenomenon, which is related to hole injection in the carrier, is mainly ascribed to hole capture at the DX center.File in questo prodotto:
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