To analyze the conducting and magnetic properties near the film and substrate interface in manganites, ultrathin films (thickness <= 100 A) of La0.7Sr0.3MnO3 were epitaxially grown by molecular-beam epitaxy on single-crystal (001) LaAlO3, (110) NdGaO3, and (001) SrTiO3 substrates. Structural, magnetic, and magnetoresistive properties were investigated. All samples exhibit a substrate-independent decrease of the c-lattice parameter for thinnest films. Highly anisotropic behavior in both transport and magnetic properties were measured along the in-plane directions parallel to the substrate crystallographic axes. In particular, for the thinnest films (60 A), the negative magnetoresistance at about 120 K with the average current along one of the crystallographic directions, is larger than the room-temperature colossal value. In the same low-temperature range, with the current along the other in-plane crystallographic direction, the magnetoresistance changes sign (resulting to be magnetic field independent for T similar to 150 K). Such an in-plane anisotropy of transport and magnetic properties is investigated with respect to possible intrinsic and extrinsic physical mechanisms.

In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films

Aruta C;
2006

Abstract

To analyze the conducting and magnetic properties near the film and substrate interface in manganites, ultrathin films (thickness <= 100 A) of La0.7Sr0.3MnO3 were epitaxially grown by molecular-beam epitaxy on single-crystal (001) LaAlO3, (110) NdGaO3, and (001) SrTiO3 substrates. Structural, magnetic, and magnetoresistive properties were investigated. All samples exhibit a substrate-independent decrease of the c-lattice parameter for thinnest films. Highly anisotropic behavior in both transport and magnetic properties were measured along the in-plane directions parallel to the substrate crystallographic axes. In particular, for the thinnest films (60 A), the negative magnetoresistance at about 120 K with the average current along one of the crystallographic directions, is larger than the room-temperature colossal value. In the same low-temperature range, with the current along the other in-plane crystallographic direction, the magnetoresistance changes sign (resulting to be magnetic field independent for T similar to 150 K). Such an in-plane anisotropy of transport and magnetic properties is investigated with respect to possible intrinsic and extrinsic physical mechanisms.
2006
Inglese
74
13
http://www.scopus.com/inward/record.url?eid=2-s2.0-33750152033&partnerID=40&md5=bfde0fd3b90f240868baa3ec1e2a6550
Sì, ma tipo non specificato
13
info:eu-repo/semantics/article
262
Orgiani, P; Petrov, ; A, Yu; Adamo, C; Aruta, C; Barone, C; De, Luca; G, M; Galdi, A; Polichetti, M; Zola, D; Maritato, ; L,
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/211513
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