When external-cavity diode lasers are used in dimensional metrology via optical interferometry, parasitic modes and background radiation deserve careful investigation. This paper gives the relevant measurement equation and explicit formulae for the excess phase of travelling fringes. Particular emphasis is given to potential errors in the measurement of the Si lattice parameter by combined x-ray and optical interferometry.

On the effect of broadband emission in external-cavity diode-laser interferometry

Galzerano;Gianluca;
2007

Abstract

When external-cavity diode lasers are used in dimensional metrology via optical interferometry, parasitic modes and background radiation deserve careful investigation. This paper gives the relevant measurement equation and explicit formulae for the excess phase of travelling fringes. Particular emphasis is given to potential errors in the measurement of the Si lattice parameter by combined x-ray and optical interferometry.
2007
Istituto di fotonica e nanotecnologie - IFN
metrological applications of diode lasers
interferometry
parasitic modes
X-RAY INTERFEROMETRY
VOLUME DETERMINATION
SILICON SPHERE
NONLINEARITY
MILLIMETER
RESOLUTION
LIGHT
NM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/211919
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