In this work, we investigate the structural properties of single and multiple AlAs/GaAs heterostructrues grown on (311) and (210) AaAs surfaces by molecular beam epitaxy. The strain state and lattice deformation of epitaxial layers gron on high-index surfaces is determined. The components of the strain tensor are calculated by minimizing the strain-energy density and are implemented in the normalized strain function of the Takagi-Taupin equations of the dynamical X-ray diffraction theory for distorted crystals in order to simulate the experimental X-ray diffraction patterns. Experimental results on AlGaAs single heterostructures and AlAs/GaAs multilayer Structures reveal that the epitaxial layers are pseudomorphic and show a shear strain component different from zero in contrast to structures grown on (001) substrates surfaces. The measured data are in excellent agreement with the calculated strain fields.
X-RAY-DIFFRACTION ANALYSIS OF GAAS/ALAS MULTILAYER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311) AND (210) GAAS-SURFACES
DE CARO L;
1994
Abstract
In this work, we investigate the structural properties of single and multiple AlAs/GaAs heterostructrues grown on (311) and (210) AaAs surfaces by molecular beam epitaxy. The strain state and lattice deformation of epitaxial layers gron on high-index surfaces is determined. The components of the strain tensor are calculated by minimizing the strain-energy density and are implemented in the normalized strain function of the Takagi-Taupin equations of the dynamical X-ray diffraction theory for distorted crystals in order to simulate the experimental X-ray diffraction patterns. Experimental results on AlGaAs single heterostructures and AlAs/GaAs multilayer Structures reveal that the epitaxial layers are pseudomorphic and show a shear strain component different from zero in contrast to structures grown on (001) substrates surfaces. The measured data are in excellent agreement with the calculated strain fields.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
