We report the piezoelectric and ferroelectric properties of individual one-dimensional objects made of Bi 4Ti 3O 12 (BiT). The nanorods and nanowires investigated in this study were fabricated by a two-step process: 1) preparation of reactive templates using hydrothermal-like synthesis and colloidal chemistry and 2) transformation of the reactive templates in Bi 4Ti 3O 12 by solid-state reaction, overcoming the morphological instability problem of 1-D templates. Using piezoresponse force microscopy (PFM) with both out-of-plane and in-plane detection capability, we show that both types of objects exhibit strong piezoelectric activity and good switching ferroelectric behavior. Analysis of the PFM hysteresis loops obtained revealed that the coercive voltage of the in-plane PFM signal can be either equal to or different from that of the out-of-plane response. We associate these situations with two types of polarization switching mechanisms: direct 180°switching, and via rotation of polarization, resulting from the independent switching of the components along the a- and ccrystallographic axes. In a few instances, we observe a negative piezoelectric coefficient, which we explain by the specific shape of the piezoelectric surface of Bi 4Ti 3O 12.
Ferroelectric switching in Bi4Ti3O12 nanorods
Buscaglia V;Buscaglia M;
2012
Abstract
We report the piezoelectric and ferroelectric properties of individual one-dimensional objects made of Bi 4Ti 3O 12 (BiT). The nanorods and nanowires investigated in this study were fabricated by a two-step process: 1) preparation of reactive templates using hydrothermal-like synthesis and colloidal chemistry and 2) transformation of the reactive templates in Bi 4Ti 3O 12 by solid-state reaction, overcoming the morphological instability problem of 1-D templates. Using piezoresponse force microscopy (PFM) with both out-of-plane and in-plane detection capability, we show that both types of objects exhibit strong piezoelectric activity and good switching ferroelectric behavior. Analysis of the PFM hysteresis loops obtained revealed that the coercive voltage of the in-plane PFM signal can be either equal to or different from that of the out-of-plane response. We associate these situations with two types of polarization switching mechanisms: direct 180°switching, and via rotation of polarization, resulting from the independent switching of the components along the a- and ccrystallographic axes. In a few instances, we observe a negative piezoelectric coefficient, which we explain by the specific shape of the piezoelectric surface of Bi 4Ti 3O 12.| File | Dimensione | Formato | |
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