Quantum confinement in nanostructured porous silicon is strongly affected by surface geometry irregularities. We have developed a method based on a variational principle for calculating volume and surface electronic states in such structures. Modelling the gas-surface interaction with the variation of the confining potential, we give a clear indication that the photoluminescence may be used as a sensing signal. A new mechanism for donor (acceptor) impurities ionization is suggested and the implication for the charge transport discussed. Finally, we show that the nanostructure surface geometrical irregularities induce a new type of carrier surface trapping which may significantly enhance the gas reactivity.
The role of quantum confinement in porous silicon gas sensors
Cantele G;
2000
Abstract
Quantum confinement in nanostructured porous silicon is strongly affected by surface geometry irregularities. We have developed a method based on a variational principle for calculating volume and surface electronic states in such structures. Modelling the gas-surface interaction with the variation of the confining potential, we give a clear indication that the photoluminescence may be used as a sensing signal. A new mechanism for donor (acceptor) impurities ionization is suggested and the implication for the charge transport discussed. Finally, we show that the nanostructure surface geometrical irregularities induce a new type of carrier surface trapping which may significantly enhance the gas reactivity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
