The construction of a fast silicon p doped low temperature bolometer is described. It is a 5 × 5 × 0.3 mm Si <100 > n-type chip whose surface has been implanted with p doses of the order of 1018cm-3. The bolometer has a response time better than 1 ?s, a responsivity of 104VW-1 and a NEP of 3x10-12 W(Hz)-1/2.
Fast silicon p doped low temperature bolometer
1984
Abstract
The construction of a fast silicon p doped low temperature bolometer is described. It is a 5 × 5 × 0.3 mm Si <100 > n-type chip whose surface has been implanted with p doses of the order of 1018cm-3. The bolometer has a response time better than 1 ?s, a responsivity of 104VW-1 and a NEP of 3x10-12 W(Hz)-1/2.File in questo prodotto:
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