We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrated on-chipbroadband antennas for rectification of THz current oscillations in the high mobility two-dimensional electron gas.
A terahertz oscillator based on GaN-HFET with integrated antenna for frequency mixing and rectification
Foglietti V;Calarco R
2012
Abstract
We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrated on-chipbroadband antennas for rectification of THz current oscillations in the high mobility two-dimensional electron gas.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
