Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of XPS technique. Surface segregation of Sn-IV and the presence of Sn-0, Ti-II, and Ti-III species in the films were revealed from XPS depth profiles.
Thin films of Zr1-xSnxTiO4 for application in microelectronics
Kaciulis S;
2000
Abstract
Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of XPS technique. Surface segregation of Sn-IV and the presence of Sn-0, Ti-II, and Ti-III species in the films were revealed from XPS depth profiles.File in questo prodotto:
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